Electroni Structure in crystalline system of Ge, GaP and SiC

Authors

  • César Cabrera Universidad Nacional Mayor de San Marcos. Lima, Perú
  • Máximo Poma Universidad Nacional Mayor de San Marcos. Lima, Perú

DOI:

https://doi.org/10.15381/rif.v20i2.15164

Keywords:

energy bands, Density of States, crystal lattice

Abstract

Be study the electronic structure of Ge and of the compounds GaP and SiC, we utilized a local density potential (LDA) and the method (LMTO) we present the calulated energy band, band-gaps, the density occupied states DOS, the total energy of crystalline system. There is good agreement between the calculated electronic properties and experimental results.

Author Biography

  • César Cabrera, Universidad Nacional Mayor de San Marcos. Lima, Perú

    Universidad Nacional Mayor de San Marcos, Ap. Postal 14-0149, Lima, Perú
    Universidad Nacional del Callao, Av. Juan Pablo II S/N, Bella-Vista, Callao, Perú

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Published

2018-01-30

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Article

How to Cite

Electroni Structure in crystalline system of Ge, GaP and SiC. (2018). Revista De Investigación De Física, 20(2), 1-4. https://doi.org/10.15381/rif.v20i2.15164