A METHOD OF MEASURING THERMAL STABILITY IN DELTA-DOPING
DOI:
https://doi.org/10.15381/rif.v8i02.8550Keywords:
Superlattice, planar doping, luminescence, donor-acceptor pair, thermal stability, geometrical arrangement.Abstract
A new superlattice in semiconductors is discussed which allows to determine the geometrical stability and precision of delta-doping layers in respect to migration and diffusion effects, and even a technological evaluation of the production devíce. This structure acts as inner probe in doping superlattices quite as the known case of enlarged wells in composition superlattices does. Donor - acceptor - pair luminescence radiation is used, which in its dependence on the pair separation distance reflects the geometrical arrangement of neighboring delta doped layers provided both donors and acceptors are present in each sheet.Downloads
Published
Issue
Section
License
Copyright (c) 2005 Alfred Zehe, Eusebio Torres Tapia, Araceli Ramírez
![Creative Commons License](http://i.creativecommons.org/l/by-nc-sa/4.0/88x31.png)
This work is licensed under a Creative Commons Attribution-NonCommercial-ShareAlike 4.0 International License.
THE AUTHORS RETAIN THEIR RIGHTS:
a. The authors retain their trademark and patent rights, as well as any process or procedure described in the article.
b. The authors retain the right to share, copy, distribute, perform and publicly communicate the article published in the Revista de Investigación de Física (for example, place it in an institutional repository or publish it in a book), with an acknowledgment of its initial publication in the Revista de Investigación de Física.
c. The authors retain the right to make a subsequent publication of their work, to use the article or any part of it (for example: a compilation of their works, notes for conferences, thesis, or for a book), provided that they indicate the source. of publication (authors of the work, journal, volume, number and date).