A METHOD OF MEASURING THERMAL STABILITY IN DELTA-DOPING
DOI:
https://doi.org/10.15381/rif.v8i02.8550Keywords:
Superlattice, planar doping, luminescence, donor-acceptor pair, thermal stability, geometrical arrangement.Abstract
A new superlattice in semiconductors is discussed which allows to determine the geometrical stability and precision of delta-doping layers in respect to migration and diffusion effects, and even a technological evaluation of the production devíce. This structure acts as inner probe in doping superlattices quite as the known case of enlarged wells in composition superlattices does. Donor - acceptor - pair luminescence radiation is used, which in its dependence on the pair separation distance reflects the geometrical arrangement of neighboring delta doped layers provided both donors and acceptors are present in each sheet.Downloads
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Copyright (c) 2005 Alfred Zehe, Eusebio Torres Tapia, Araceli Ramírez
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