Epitaxial growth of YBa2Cu3O7 superconducting layers by chemical solution deposition

Authors

  • Jorge García Facultad de Ciencias Físicas, Universidad Nacional Mayor de San Marcos
  • Angel Bustamante Facultad de Ciencias Físicas, Universidad Nacional Mayor de San Marcos
  • Luis De Los Santos Cavendish Laboratory, University of Cambridge, J.J. Thomson Av., Cambridge CB3 OHE, U.K. Tokyo Institute of Technology, 4259 Nagatsuta-cho, Yokohama 226-8503, Japan. Departamento de Física, Universidade Federal de Pernambuco, 50670-901, Recife, Brasil
  • J. C. González Instituto de Ciencia de Materiales de Sevilla, CSIC, Universidad de Sevilla, Calle Américo Vespucio 49, Isla de la Cartuja, 41092 Sevilla, España
  • Lizbet León Facultad de Ciencias Físicas, Universidad Nacional Mayor de San Marcos
  • Jesús Flores Facultad de Ciencias Físicas, Universidad Nacional Mayor de San Marcos
  • Ana M. Osorio Facultad de Química e Ingeniería Química, Universidad Nacional Mayor de San Marcos
  • J. Albino Aguiar Departamento de Física, Universidade Federal de Pernambuco, 50670-901, Recife, Brasil

DOI:

https://doi.org/10.15381/rif.v15i02.8685

Keywords:

YBCO thin layer, SrTiO3 monocrystalline substrate, epitaxial growth of superconducting layers.

Abstract

We studied the optimun temperature to favor the epitaxial growth of YBa2Cu3O7 layers using threesintering temperatures of 820, 840 and 860℃, by the chemical solution deposition method in SrTiO3[100] monocrystalline substrates. Surface morphology was obtained by optical imaging, which qualitativelycharacterize the homogeneity and the grain presence along the c-axis. The X-ray diffractionconfirms the preferential epitaxial growth (00l) of the YBa2Cu3O7 crystals, resulting in a higher intensityof the profiles (00l) for the temperature of 860℃. The samples shown superconducting behaviourat critical temperature of 90 K, for the three cases.

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Published

2012-12-31

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How to Cite

Epitaxial growth of YBa2Cu3O7 superconducting layers by chemical solution deposition. (2012). Revista De Investigación De Física, 15(02), 1-6. https://doi.org/10.15381/rif.v15i02.8685