Tunnelling through a GaAs/(AlGa)As coupled double-quantum­ well heterostructure

Authors

  • Robert Velasquez "Departamento de Física, 1CEx, Universidade Federal de Minas Gerais, Caixa Posta/702, CEP 30161-970, Be/o Horizonte, MG, Brazil
  • E. S. Alves "Departamento de Física, 1CEx, Universidade Federal de Minas Gerais, Caixa Posta/702, CEP 30161-970, Be/o Horizonte, MG, Brazil
  • A. G. de Oliveira "Departamento de Física, 1CEx, Universidade Federal de Minas Gerais, Caixa Posta/702, CEP 30161-970, Be/o Horizonte, MG, Brazil
  • M. V. B. Mereira "Departamento de Física, 1CEx, Universidade Federal de Minas Gerais, Caixa Posta/702, CEP 30161-970, Be/o Horizonte, MG, Brazil

DOI:

https://doi.org/10.15381/rif.v5i01-02.8778

Keywords:

quantum wells, semiconductors, tunneling

Abstract

A splitting of the main resonant peales is observed in the current-voltage characteristics of a double-quantum-well resonant tunnelling device, due to coupling between well states. Under a high magnetic field applied in the current direction, the peales collapse into a single peak and from the magnetotunnelling data we are able to estimate the energy splitting between the coupled states © 2002 CSI. All rights reserved

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Published

2002-12-31

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How to Cite

Tunnelling through a GaAs/(AlGa)As coupled double-quantum­ well heterostructure. (2002). Revista De Investigación De Física, 5(01-02), 14-17. https://doi.org/10.15381/rif.v5i01-02.8778