TRANSPORTE ELECTRÓNICO EN CUASICRISTALES
DOI:
https://doi.org/10.15381/rif.v8i01.8836Keywords:
Quasicrystals, Electronic Transport, ab-initio Calculations.Abstract
The temperature dependent transport coefficients are theoretically examined in different phases ofthe Al-Cu Fe system. In the present work we focus on the conductivity and the thermoelectric power. The spectral resistivity is modeled by means of Lorentzian functions, in agreement with our ab-initio results (linear muffm-tin orbital basis and Kubo-Greenwood formula). This model considers the most important information of the ab-initio results in order to explain consistently the transport coefficients mentioned above. The numerical results shown in this work are in good agreement with the experimental ones.Downloads
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Copyright (c) 2005 C. V. Landauro
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