Crystallography and surface morphology evolution of thermally treated Cu thin films on SiO2/Si substrates

Authors

  • Daniel Hurtado Salinas Laboratorio de Cerámicos y Nanomateriales, Facultad de Ciencias Físicas, Universidad Nacional Mayor de San Marcos
  • Angel Bustamante Domínguez Laboratorio de Cerámicos y Nanomateriales, Facultad de Ciencias Físicas, Universidad Nacional Mayor de San Marcos
  • Lizbet León Felix Laboratorio de Cerámicos y Nanomateriales, Facultad de Ciencias Físicas, Universidad Nacional Mayor de San Marcos. Cavendish Laboratory, University of Canbridge, J.J. Thomson
  • Luis De los Santos Valladares Cavendish Laboratory, University of Canbridge, J.J. Thomson. Materials and Structures Laboratory, Tokyo Institute of Technology
  • Yutaka Majima Materials and Structures Laboratory, Tokyo Institute of Technology. CREST-JST, 4259 Nagatsuta-cho

DOI:

https://doi.org/10.15381/rif.v13i01.8849

Keywords:

Cu thin films, SiO2/Si substrates, SEM, XRD, crystallization, surface morphology, Cu silicides.

Abstract

In this work, we study the crystallization and surface morphology of Cu thin films (exposed to environment) growth on SiO2/Si subsstrates. The samples thermally treated using a tubular furnace bet ween temperature range 250-1000ºC during an elapsed time of 3 hours, after was cooling to a rate of 1.4ºC/min. The crystalization process was measured by X-ray difraction (XRD), meanwhile the surface morphology was observed with scanning electron microscopy (SEM). The results was analyzed and permit us to know the temperature dependecy of the dynamics of surface atoms on the Cu/SiO2 system, are the range between 400-500ºC. During the annealing an oxidation process on sample surfaces occur and the presence of Cu silicides are detected.

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Published

2010-07-15

Issue

Vol. 13 No. 01 (2010)

Section

Article

License

Copyright (c) 2010 Daniel Hurtado Salinas, Angel Bustamante Domínguez, Lizbet León Felix, Luis De los Santos Valladares, Yutaka Majima

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How to Cite

Crystallography and surface morphology evolution of thermally treated Cu thin films on SiO2/Si substrates. (2010). Revista De Investigación De Física, 13(01), 1-7. https://doi.org/10.15381/rif.v13i01.8849